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| RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA0522. Features * 15A, 50V and 60V * rDS(ON) = 0.140 * Design Optimized for 5V Gate Drives * Can be Driven from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics Ordering Information PART NUMBER RFP15N05L RFP15N06L NOTE: PACKAGE TO-220AB TO-220AB BRAND RFP15N05L RFP15N06L * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB DRAIN (TAB) SOURCE DRAIN GATE (c)2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B RFP15N05L, RFP15N06L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N05L 50 50 15 40 10 60 0.48 -55 to 150 300 260 RFP15N06L 60 60 15 40 10 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 50 60 VGS(TH) IDSS VGS = VDS, ID = 250A (Figure 7) VDS = 48V, VDS = 50V VDS = 48V, VDS = 50V TC = 125oC 1 VDD = 30V, ID = 7.5A, RG = 6.25 (Figures 10, 11) VGS = 5V RFP15N05L, RFP15N06L 16 250 200 225 2 1 50 100 0.140 900 450 200 40 325 325 325 2.083 V V V A A nA pF pF pF ns ns ns ns oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP15N05L RFP15N06L Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IGSS rDS(ON) CISS COSS CRSS td(ON) tr td(OFF) tf RJC VGS = 10V, VDS = 0V ID = 15A, VGS = 5V (Figures 5, 6) VDS = 25V, VGS = 0V, f = 1MHz (Figure 8) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulsed: pulse duration = 300s maximum, duty cycle = 2%. 3. Repititive rating: pulse width limited by maximum junction temperature. (c)2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B SYMBOL VSD trr ISD = 7.5A TEST CONDITIONS MIN - TYP 225 MAX 1.4 - UNITS V ns ISD = 4A, dISD/dt = 100A/s RFP15N05L, RFP15N06L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) ID MAX CONTINUOUS 10 Unless Otherwise Specified 100 TC = 25oC CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.8 0.6 0.4 0.2 0 DC OP ER AT I 1 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ON RFP15N05L RFP15N06L 0 50 100 150 0 1 TC, CASE TEMPERATURE (oC) 10 100 VDS, DRAIN SOURCE VOLTAGE (V) 1000 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. FORWARD BIAS SAFE OPERATING AREA 40 IDS, DRAIN TO SOURCE CURRENT (A) IDS, DRAIN TO SOURCE CURRENT PULSE DURATION = 80s DUTY CYCLE 0.5% MAX TC = 25oC 30 VGS = 10V VGS = 5V VGS = 4.5V 20 VGS = 4V VGS = 3.5V 10 VGS = 3V VGS = 2.5V VGS = 2V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 VGS = 7.5V 16 14 12 -40oC 10 8 6 4 2 0 0 125oC 25oC VDS = 10V PULSE DURATION = 80s DUTY CYCLE 0.5% MAX 125oC -40oC 5 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS 0.3 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 5V PULSE DURATION = 80s DUTY CYCLE 0.5% MAX ON RESISTANCE () 0.2 TC = 125oC 0.1 25oC 2.0 VGS = 10V, ID = 15A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 rDS(ON), DRAIN TO SOURCE 1 0.5 -40oC 0 0 2 4 6 8 10 12 ID, DRAIN TO SOURCE CURRENT (A) 14 16 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE (c)2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B RFP15N05L, RFP15N06L Typical Performance Curves 1.4 VGS = VDS NORMALIZED GATE THRESHOLD VOLTAGE ID = 250A 1.2 C, CAPACITANCE (pF) Unless Otherwise Specified (Continued) 1600 1400 1200 1000 800 600 400 200 CRSS COSS CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1 0.8 0.6 -50 0 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 60 BVDSS DRAIN TO SOURCE VOLTAGE (V) 45 FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 GATE TO SOURCE VOLTAGE (V) RL = 4 IG(REF) = 0.5mA VGS = 5V GATE SOURCE VOLTAGE VDD = BVDSS VDD = BVDSS 4 8 6 30 15 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 2 0 20 IG (REF) IG (ACT) t, TIME (s) 80 IG (REF) IG (ACT) 0 NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B RFP15N05L, RFP15N06L Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 10V VGS + Qg(TOT) Qg(5) VDD VGS VGS = 1V 0 Qg(TH) IG(REF) 0 VGS = 5V DUT IG(REF) FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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